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STP15NK50Z/FP, STB15NK50Z STB15NK50Z-1, STW15NK50Z
N-CHANNEL500V-0.30-14ATO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESHTMPower MOSFET
TYPE STP15NK50Z STP15NK50ZFP STB15NK50Z STB15NK50Z-1 STW15NK50Z
s s s s s s
VDSS 500 500 500 500 500 V V V V V
RDS(on) < 0.34 < 0.34 < 0.34 < 0.34 < 0.34
ID 14 14 14 14 14 A A A A A
Pw 160 W 40 W 160 W 160 W 160 W TO-220
3 2 1
3 1 2
TYPICAL RDS(on) = 0.30 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY
TO-220FP
TO-247
1
3
1
23
I2PAK
D2PAK
DESCRIPTION The SuperMESHTM series is obtained through an extreme optimization of ST's well established stripbased PowerMESHTM layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmeshTM products. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC s LIGHTING
s
INTERNAL SCHEMATIC DIAGRAM
ORDERING INFORMATION
SALES TYPE STP15NK50Z STP15NK50ZFP STB15NK50ZT4 STB15NK50Z STB15NK50Z-1 STW15NK50Z MARKING P15NK50Z P15NK50ZFP B15NK50Z B15NK60Z B15NK50Z W15NK50Z PACKAGE TO-220 TO-220FP D2PAK D2PAK I2PAK TO-247 PACKAGING TUBE TUBE TAPE & REEL TUBE (ONLY UNDER REQUEST) TUBE TUBE
August 2002
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STP15NK50Z, STP15NK50ZFP, STB15NK50Z, STB15NK50Z-1, STW15NK50Z
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter
STP15NK50Z STB15NK50Z STB15NK50Z-1
Value
STP15NK50ZFP STW15NK50Z
Unit
VDS VDGR VGS ID ID IDM ( ) PTOT IGS VESD(G-S) dv/dt (1) VISO Tj Tstg
Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Gate-source Current (DC) Gate source ESD(HBM-C=100pF, R=1.5K) Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Operating Junction Temperature Storage Temperature 14 8.8 56 160 1.28
500 500 30 14 (*) 8.8 (*) 56 (*) 40 0.32 20 4000 4.5 2500 -55 to 150 -55 to 150 14 8.8 56 160 1.28
V V V A A A W W/C mA V V/ns V C C
( ) Pulse width limited by safe operating area (1) ISD 14A, di/dt 200A/s, VDD V(BR)DSS, Tj T JMAX. (*) Limited only by maximum temperature allowed
THERMAL DATA
TO-220 I2PAK Rthj-case Rthj-pcb Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-pcb Max (#) Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose D2PAK TO-220FP 3.1 60 62.5 300 50 TO-247 0.78 C/W C/W C/W C
0.78
AVALANCHE CHARACTERISTICS
Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 C, ID = IAR, VDD = 50 V) Max Value 14 300 Unit A mJ
GATE-SOURCE ZENER DIODE
Symbol BVGSO Parameter Gate-Source Breakdown Voltage Test Conditions Igs= 1mA (Open Drain) Min. 30 Typ. Max. Unit V
(#) When mounted on minimum Footprint
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components.
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STP15NK50Z, STP15NK50ZFP, STB15NK50Z, STB15NK50Z-1, STW15NK50Z
ELECTRICAL CHARACTERISTICS (TCASE =25C UNLESS OTHERWISE SPECIFIED) ON/OFF
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Gate Threshold Voltage Static Drain-source On Resistance Test Conditions ID = 1 mA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 C VGS = 20V VDS = VGS, ID = 100A VGS = 10V, ID = 7 A 3 3.75 0.30 Min. 500 1 50 10 4.5 0.34 Typ. Max. Unit V A A A V
DYNAMIC
Symbol gfs (1) Ciss Coss Crss Coss eq. (3) Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Equivalent Output Capacitance Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDS = 15 V, ID = 7 A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 12 2260 264 64 150 Max. Unit S pF pF pF pF
VGS = 0V, VDS = 0V to 400V
SWITCHING ON
Symbol td(on) tr Qg Qgs Qgd Test Conditions VDD = 250 V, ID = 7 A RG = 4.7 VGS = 10 V (Resistive Load see, Figure 3) VDD = 400V, ID = 14 A, VGS = 10V Min. Typ. 20 23 76 15 40 106 Max. Unit ns ns nC nC nC
SWITCHING OFF
Symbol td(off) tf tr(Voff) tf tc Parameter Turn-off Delay Time Fall Time Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 250 V, ID = 7 A RG = 4.7 VGS = 10 V (Resistive Load see, Figure 3) VDD = 400V, ID = 14 A, RG = 4.7, VGS = 10V (Inductive Load see, Figure 5) Min. Typ. 62 15 13 11 28 Max. Unit ns ns ns ns ns
SOURCE DRAIN DIODE
Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 14 A, VGS = 0 ISD = 14 A, di/dt = 100A/s VDD = 29V, Tj = 150C (see test circuit, Figure 5) 428 4.2 20 Test Conditions Min. Typ. Max. 14 56 1.6 Unit A A V ns C A
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS.
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STP15NK50Z, STP15NK50ZFP, STB15NK50Z, STB15NK50Z-1, STW15NK50Z
Safe Operating Area For TO-220/D2PAK/I2PAK Thermal Impedance For TO-220/D2PAK/I2PAK
Safe Operating Area For TO-220FP
Thermal Impedance For TO-220FP
Safe Operating Area For TO-247
Thermal Impedance For TO-247
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STP15NK50Z, STP15NK50ZFP, STB15NK50Z, STB15NK50Z-1, STW15NK50Z
Output Characteristics Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
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STP15NK50Z, STP15NK50ZFP, STB15NK50Z, STB15NK50Z-1, STW15NK50Z
Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized BVDSS vs Temperature
Maximum Avalanche Energy vs Temperature
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STP15NK50Z, STP15NK50ZFP, STB15NK50Z, STB15NK50Z-1, STW15NK50Z
Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times
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STP15NK50Z, STP15NK50ZFP, STB15NK50Z, STB15NK50Z-1, STW15NK50Z
TO-220 MECHANICAL DATA
DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107
A
C
D1
L2
D
F1
G1
E
Dia. L5 L7 L6 L4
P011C
L9
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F2
F
G
H2
STP15NK50Z, STP15NK50ZFP, STB15NK50Z, STB15NK50Z-1, STW15NK50Z
TO-220FP MECHANICAL DATA
mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.5 1.5 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409
DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 O
A
B
L3 L6 L7
F1 F
D
G1 H
F2
L2 L5
E
123
L4
G
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STP15NK50Z, STP15NK50ZFP, STB15NK50Z, STB15NK50Z-1, STW15NK50Z
D2PAK MECHANICAL DATA
mm. DIM. MIN. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0 4.88 15 1.27 1.4 2.4 0.4 8 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.050 0.055 0.094 0.015 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 TYP MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch
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3
1
STP15NK50Z, STP15NK50ZFP, STB15NK50Z, STB15NK50Z-1, STW15NK50Z
TO-262 (I2PAK) MECHANICAL DATA
mm MIN. A A1 B B2 C C2 D e E L L1 L2 4.4 2.49 0.7 1.14 0.45 1.23 8.95 2.4 10 13.1 3.48 1.27 TYP. MAX. 4.6 2.69 0.93 1.7 0.6 1.36 9.35 2.7 10.4 13.6 3.78 1.4 MIN. 0.173 0.098 0.027 0.044 0.017 0.048 0.352 0.094 0.393 0.515 0.137 0.050 inch TYP. MAX. 0.181 0.106 0.036 0.067 0.023 0.053 0.368 0.106 0.409 0.531 0.149 0.055
DIM.
A
C2
B2
B
E
L1 L2 D L
P011P5/E
e
A1
C
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STP15NK50Z, STP15NK50ZFP, STB15NK50Z, STB15NK50Z-1, STW15NK50Z
TO-247 MECHANICAL DATA
mm. MIN. 4.85 2.20 0.40 1 3 2 2 3 10.90 15.45 19.85 3.70 18.50 14.20 34.60 5.50 2 5 60 3.55 3.65 0.14 3 0.07 5 60 0.143 14.80 0.56 1.36 0.21 0.11 15.75 20.15 4.30 0.60 0.78 0.14 0.72 0.58 2.40 3.40 0.07 0.11 0.43 0.62 0.79 0.17 TYP MAX. 5.15 2.60 0.80 1.40 MIN. 0.19 0.08 0.015 0.04 0.11 0.07 0.09 0.13 inch TYP. MAX. 0.20 0.10 0.03 0.05
DIM. A D E F F1 F2 F3 F4 G H L L1 L2 L3 L4 L5 M V V2 Dia
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STP15NK50Z, STP15NK50ZFP, STB15NK50Z, STB15NK50Z-1, STW15NK50Z
D2PAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
TAPE AND REEL SHIPMENT (suffix "T4")*
REEL MECHANICAL DATA
DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992
TAPE MECHANICAL DATA
DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956
BASE QTY 1000
* on sales type
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STP15NK50Z, STP15NK50ZFP, STB15NK50Z, STB15NK50Z-1, STW15NK50Z
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. (c) The ST logo is a registered trademark of STMicroelectronics (c) 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. (c) http://www.st.com
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